Method cleaning Field Emittor Display using Laser and Ar ECR Plasma

专利摘要:
PURPOSE: An FED cleaning method using a laser and an Ar ECR plasma is provided to be capable of simplifying cleaning equipment, reducing cleaning costs and shortening cleaning time by separating metal contaminants on an FED through removing a natural oxide film using Ar ECR plasma and cleaning the FED using a laser and nitrogen gas. CONSTITUTION: First, an FED is automatically conveyed to a cleaning space. Then, a natural oxide film is removed by applying an Ar ECR plasma to the conveyed FED, thereby separating metal contaminants on a surface of the FED. Next, contaminants absorbed to the FED are separated by radiating a laser. Finally, the FED is completely cleaned by injecting inert gas to the separated contaminants and then discharging the inert gas including the contaminants.
公开号:KR20020000190A
申请号:KR1020000034640
申请日:2000-06-23
公开日:2002-01-05
发明作者:최승락
申请人:최승락；
IPC主号:

专利说明:

Method cleaning field emitter display using Laser and Ar ECR Plasma}
[1] The present invention relates to a method of cleaning a FED, which is a type of flat panel display. In particular, after performing each process in the FED processing process of the FED manufacturing process to remove the contaminants adsorbed on the FED to reduce the defective rate of the FED, This process is cleaned using argon ECR plasma to remove the native oxide film to separate metal impurities on the FED surface, and using laser and nitrogen gas to simplify the cleaning equipment, reduce the cleaning cost and shorten the cleaning time. The present invention relates to a FED cleaning method using a laser and an Ar ECR plasma.
[2] During the FED manufacturing process, contaminants such as particles, organic matter, heavy metals and ionic impurities, oxide film, and metal are adsorbed on the surface of the FED, and the contaminants cause defects of the FED chip. Contaminants should be removed.
[3] The method of cleaning contaminants adsorbed on FED surface can be classified into wet and dry. Currently, dry cleaning cannot remove contaminants sufficiently. Wet cleaning is the mainstream.
[4] In the wet cleaning, the FED is sequentially moved by a transfer robot, soaked in the chemical liquid (acid or ammonia) tank or the washing tank, and then rotated and dried.
[5] In general, the cleaning equipment as described above is operated under demanding conditions, and the robot needs low oscillation, transfer reliability, high speed, and chemical resistance, and a high-performance motor is used for the reliability of the transfer or the high-speed transfer. Special chemical materials are also selected for double sealing with fluorine resin.
[6] The equipment used to clean the FED is generally called a wet station, which uses a method of rotating the FED, spraying pure cleaning liquid on its surface, and then cleaning the particles with a brush. Particles may be sprayed to remove particles, and a method of oscillating high frequency ultrasonic waves may be used to drop particles by vibrating force.
[7] Therefore, the conventional FED cleaning equipment as described above uses pure water or chemicals to remove contaminants in the FED, and thus inefficient use of water (1,000 gallon / 100 mm 2) or chemicals in the process. By using, a large amount of VOCs (IPA, Aceton), acids (fluoric acid, sulfuric acid), solvents can cause problems such as generation and wastewater treatment, and additionally expensive due to the complexity of the process There was this.
[8] Therefore, an object of the present invention is to remove the contaminants adsorbed on the FED to reduce the failure rate of the FED after performing each step in the FED processing step of the FED manufacturing process, using the argon ECR plasma to remove the natural oxide film FED using laser and Ar ECR plasma which can remove the metal impurities on the surface of the FED and clean it using laser and nitrogen gas, simplifying the cleaning equipment, reducing the cleaning cost and shortening the cleaning time. It is to provide a cleaning method.
[9] Technical method of the present invention for achieving the above object, in the process of cleaning the FED of the FED manufacturing process, the step of automatically transferring the FED to the cleaning space; Separating the metal oxide on the surface of the FED by removing the native oxide film using the argon ECR plasma to the transferred FED; Radiating a laser to separate contaminants adsorbed on the FED; And injecting an inert gas into the separated contaminants and discharging them to the outside for cleaning.
[10] The present invention is a dry process that can completely replace the wet cleaning process, it is possible to drastically reduce the use of the generation of chemicals and waste water treatment mentioned in the prior art, as well as to implement a multi-stage treatment process for removing contaminants. It can be reduced to a one-step process, minimizing contamination through materials generated in the process of removing chemicals.
[11] After the photoresist is applied to the FED or each step of developing, etching, and forming the electrode is performed, the FED is washed. As described above, the contamination adsorbed on the FED using pure water, chemicals, and brushes is conventionally performed. In contrast to the removal of the material, the present invention uses an argon ECR plasma to remove the native oxide film to separate the metal impurities on the surface of the FED. After the separation, a second cleaning process is performed in which a strong inert gas such as nitrogen gas is blown out through a nozzle, thereby removing all contaminants generated in the manufacturing process of the FED.
[12] In addition, various wavelengths and frequencies of the laser can be used to selectively remove specific contaminants, eliminating all contaminants in one process.
[13] Particles, organics, and ionic impurities adsorbed on the FED are cleaned using a laser. Heavy metals and metal oxides (Natrium / Chemical Oxide) are removed by argon ECR plasma. It will remove the metal impurities on the FED surface.
[14] In order to remove contaminants through this cleaning, the electronic circuits on the FED must be free of damage, and cleaning gases and laser wavelengths suitable for the FED process should be used.
[15] In addition, cleaning using an argon ECR plasma is not only in contact with a specific part of the FED but in contact with the entire surface of the FED to remove the metal oxides on the surface of the FED to separate metal impurities on the surface of the FED, and the laser to the entire surface of the FED. After separating the foreign matter bound by electrostatic discharge from the FED, a strong nitrogen gas is ejected to the front of the FED to discharge the foreign matter to the outside.
[16] When the laser is radiated to the foreign material, the electrostatic phenomenon between the FED and the foreign material is removed by the laser ablation effect, and the foreign material is separated from the FED.
[17] Using the argon ECR plasma as described above, the minimum particle size that can be removed can be up to 0.09㎛, and the cleaning time can be within 25 seconds per 200mm2 (25sec / 200mm2) to increase the amount of FED cleaning per minute. The wavelength of the laser is preferably 248 nm, and depending on the contaminants to be cleaned, HCl, HF / H₂O or HF / alcohol is used as the cleaning liquid, and a krypton fluoride laser is used as the laser. Argon fluoride excimer (ArF Excimer) laser can be used.
[18] When FED is cleaned in the same way as above, the size of the storage tank and piping facilities for the chemical process can be drastically reduced, and it is possible to reduce about 50% of the cleaning space and to reduce about 50% of the basic working space. Innovate to reduce your workspace.
[19] In addition, due to the use of the minimum amount of pure water and chemicals required for the existing cleaning, it is possible to produce a competitive FED at a price by reducing not only the production cost but also the cost of environmental purification such as wastewater treatment.
[20] Therefore, in the present invention, unlike the conventional method, by using a minimum amount of pure water and chemicals in the cleaning process of the FED manufacturing process, it is possible not only to reduce the cost of reducing chemical purchasing cost and wastewater treatment cost, but also to minimize the harmful substances. Emissions have the effect of minimizing the cost of environmental pollution.
[21] In addition, the storage tank and plumbing equipment for the chemical process can be reduced to innovatively reduce the work space has the effect of increasing the work output in a certain space.
[22] In addition, the success of the dry cleaning of the FED manufacturing process can achieve 100% of the dry process of the FED manufacturing process.

权利要求:
Claims (4)
[1" claim-type="Currently amended] In the process of cleaning the FED during the FED manufacturing process,
Automatically transferring the FED to a cleaning space;
Separating the metal oxide on the surface of the FED by removing the native oxide layer using the argon ECR plasma to the transferred FED;
And emitting a laser to separate contaminants such as micro-contamination such as particles, organics, and ionic impurities adsorbed on the FED;
And injecting an inert gas into the separated contaminants and discharging the contaminants to the outside to clean the FED.
[2" claim-type="Currently amended] The method of claim 1,
And a vacuum chamber in which the laser is operated and a vacuum chamber capable of argon ECR plasma are used in common.
[3" claim-type="Currently amended] The method of claim 1,
The laser is a FED cleaning method using a laser and Ar ECR plasma, characterized in that using a fluorine krypton excimer (KrF Excimer) laser.
[4" claim-type="Currently amended] The method of claim 1,
The laser is an FED cleaning method using a laser and Ar ECR plasma, characterized in that using an argon fluoride (ArF Excimer) laser.

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同族专利:

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2000-06-23|Application filed by 최승락

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2000-06-23|Priority to KR1020000034640A

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2002-01-05|Publication of KR20020000190A

优先权:

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申请号 | 申请日 | 专利标题

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KR1020000034640A|KR20020000190A|2000-06-23|2000-06-23|Method cleaning Field Emittor Display using Laser and Ar ECR Plasma|